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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors TIP29/29A/29B/29C DESCRIPTION *With TO-220C package *Complement to type TIP30/30A/30B/30C APPLICATIONS *For use in general purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER TIP29 TIP29A VCBO Collector-base voltage TIP29B TIP29C TIP29 TIP29A VCEO Collector-emitter voltage TIP29B TIP29C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 100 5 1 3 0.4 30 -65~150 -65~150 V A A A w Open emitter 80 100 40 60 V CONDITIONS VALUE 40 60 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP29 Collector-emitter sustaining voltage TIP29A IC=30mA; IB=0 TIP29B TIP29C VCE(sat) VBE Collector-emitter saturation voltage Base-emitter on voltage TIP29 Collector cut-off current TIP29A TIP29B TIP29C Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency TIP29/29A TIP29B/29C IC=1A; IB=0.125A IC=1A ; VCE=4V VCE=40V; VEB=0 VCE=60V; VEB=0 CONDITIONS SYMBOL TIP29/29A/29B/29C MIN 40 60 TYP. MAX UNIT VCEO(SUS) V 80 100 0.7 1.3 V V ICES 0.2 VCE=80V; VEB=0 VCE=100V; VEB=0 VCE=30V; IB=0 0.3 VCE=60V; IB=0 VEB=5V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V IC=0.2A ; VCE=10V;f=1MHz 40 15 3 75 1.0 mA ICEO mA IEBO hFE-1 hFE-2 fT mA MHz THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.167 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE TIP29/29A/29B/29C Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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